- Sections
- H - électricité
- H01L - Dispositifs à semi-conducteurs non couverts par la classe
- H01L 29/88 - Diodes à effet tunnel
Détention brevets de la classe H01L 29/88
Brevets de cette classe: 243
Historique des publications depuis 10 ans
|
28
|
25
|
26
|
17
|
14
|
19
|
15
|
16
|
19
|
1
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Propriétaires principaux
| Proprétaire |
Total
|
Cette classe
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
18 |
| Rohm Co., Ltd. | 5843 |
13 |
| Samsung Electronics Co., Ltd. | 131630 |
10 |
| Intel Corporation | 45621 |
7 |
| Fujitsu Limited | 19265 |
6 |
| Atomera Incorporated | 172 |
6 |
| Tokyo Institute of Technology | 1367 |
6 |
| International Business Machines Corporation | 60644 |
5 |
| Board of Regents, The University of Texas System | 5370 |
5 |
| The Regents of the University of California | 18943 |
4 |
| The Boeing Company | 19843 |
4 |
| Canon Inc. | 36841 |
4 |
| The United States of America as represented by the Secretary of the Navy | 2734 |
4 |
| Enkris Semiconductor, Inc. | 310 |
4 |
| Epistar Corporation | 1553 |
4 |
| Lumileds LLC | 1827 |
4 |
| Suzhou Lekin Semiconductor Co., Ltd. | 1710 |
4 |
| Micron Technology, Inc. | 24960 |
3 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
3 |
| Infineon Technologies AG | 8189 |
3 |
| Autres propriétaires | 126 |